Effect of SiO2/SiC interface on inversion channel electron mobility of 4H-SiC n-MOSFET

被引：0
|
作者：
Xu, Jingping [1 ]
Wu, Haiping [1 ]
Lai, P.T. [2 ]
Han, Bi [1 ]
机构：
[1] Dept. of Electron. Sci. and Technol., Huazhong Univ. of Sci. and Technol., Wuhan 430074, China
[2] Dept. of Elec. and Electron. Eng., Univ. of Hong Kong, Hong Kong, Hong Kong
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2004年 / 25卷 / 02期
关键词：
Electrically shielded effect - Interface states - Inversion channel electron mobility - Ionized impurities - Lattice - Silicon dioxide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
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页码：200 / 205
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