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- [5] Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar MicrostructureJAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (01)Lee, Keon-HunShin, In SuPark, Sung HyunMoon, Dae YoungKim, MinhwaPark, JinsubNanishi, YasushiYoon, Euijoon
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- [7] Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphireJOURNAL OF CRYSTAL GROWTH, 2010, 312 (03) : 363 - 367Kappers, M. J.Moram, M. A.Rao, D. V. SridharaMcAleese, C.Humphreys, C. J.
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