Metallorganic molecular beam epitaxy of CuInSe2 on GaAs substrate

被引：0
|
作者：
Ehime Univ, Ehime, Japan [1 ]
机构：
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1998年 / 37卷 / 9 A-B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Metalorganic molecular beam epitaxy of CuInSe2 on GaAs substrate
    Shirakata, S
    Yudate, S
    Terasako, T
    Isomura, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (9AB): : L1033 - L1035
  • [2] Metalorganic Molecular Beam Epitaxy of CuAlSe2, CuGaSe2 and CuInSe2 on GaAs Substrate
    Shirakata, Sho
    Terasako, Tomoaki
    Isomura, Shigehiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) : 198 - 199
  • [3] CHARACTERIZATION OF MOLECULAR-BEAM EPITAXY-GROWN CUINSE2 ON GAAS(001)
    SHIODA, R
    OKADA, Y
    OYANAGI, H
    NIKI, S
    YAMADA, A
    MAKITA, Y
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1196 - 1200
  • [4] EXCITONIC EMISSIONS FROM CUINSE2 ON GAAS(001) GROWN BY MOLECULAR-BEAM EPITAXY
    NIKI, S
    SHIBATA, H
    FONS, PJ
    YAMADA, A
    OBARA, A
    MAKITA, Y
    KURAFUJI, T
    CHICHIBU, S
    NAKANISHI, H
    APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1289 - 1291
  • [5] Photoluminescence properties of CuInSe2 grown by molecular beam epitaxy
    Niki, Shigeru
    Makita, Yunosuke
    Yamada, Akimasa
    Obara, Akira
    Igarashi, Osamu
    Misawa, Syunji
    Kawai, Michihiro
    Nakanishi, Hisayuki
    Taguchi, Yutaka
    Kutsuwada, Noboru
    Solar Energy Materials and Solar Cells, 1994, 35 (1 -4 pt 2): : 141 - 147
  • [6] Effects of annealing on CuInSe2 films grown by molecular beam epitaxy
    Niki, S
    Kim, I
    Fons, PJ
    Shibata, H
    Yamada, A
    Oyanagi, H
    Kurafuji, T
    Chichibu, S
    Nakanishi, H
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) : 319 - 326
  • [7] PHOTOLUMINESCENCE PROPERTIES OF CUINSE2 GROWN BY MOLECULAR-BEAM EPITAXY
    NIKI, S
    MAKITA, Y
    YAMADA, A
    OBARA, A
    IGARASHI, O
    MISAWA, S
    KAWAI, M
    NAKANISHI, H
    TAGUCHI, Y
    KUTSUWADA, N
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1994, 35 (1-4) : 141 - 147
  • [8] Control of intrinsic defects in molecular beam epitaxy grown CuInSe2
    Niki, S
    Fons, PJ
    Lacroix, Y
    Iwata, K
    Yamada, A
    Oyanagi, H
    Uchino, M
    Suzuki, Y
    Suzuki, R
    Ishibashi, S
    Ohdaira, T
    Sakai, N
    Yokokawa, H
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1061 - 1064
  • [9] Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy
    Abderrafi, K.
    Ribeiro-Andrade, R.
    Nicoara, N.
    Cerqueira, M. F.
    Gonzalez Debs, M.
    Limborco, H.
    Salome, P. M. P.
    Gonzalez, J. C.
    Briones, F.
    Garcia, J. M.
    Sadewasser, S.
    JOURNAL OF CRYSTAL GROWTH, 2017, 475 : 300 - 306
  • [10] Direct growth of heteroepitaxial CuInSe2 on GaN (0001) by molecular beam epitaxy
    Shih, Cheng-Hung
    Lo, Ikai
    You, Shuo-Ting
    Tsai, Cheng-Da
    Tseng, Bae-Heng
    Chen, Yun-Feng
    Chen, Chiao-Hsin
    Hsu, Gary Z. L.
    THIN SOLID FILMS, 2015, 574 : 132 - 135
12345