Automatic Measurement of Noise Parameters of Microwave MESFETs.

被引：0
|
作者：
Chusseau, Laurent [1 ]
Parisot, Marc [1 ]
Jousseaume, Nelly [1 ]
机构：
[1] CNRS, Orsay, Fr, CNRS, Orsay, Fr
来源：
Annales des Telecommunications/Annals of Telecommunications | 1988年 / 43卷 / 5-6期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：323 / 329
相关论文
共 50 条
  • [1] AUTOMATIC NOISE PARAMETERS DETERMINATION OF MICROWAVE MESFETS
    CHUSSEAU, L
    PARISOT, M
    JOUSSEAUME, N
    ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS, 1988, 43 (5-6): : 323 - 330
  • [2] Microwave passive power limiters with MESFETs.
    Drozdovski, NV
    1997 SBMO/IEEE MTTS-S - INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE, PROCEEDINGS, VOLS 1 AND 2, 1997, : 409 - 412
  • [3] GaAs COMPOUNDS PROMISE LOWER NOISE MESFETs.
    Vaitkus, Rimantas L.
    Miers, Tom H.
    Microwaves New York, N.Y., 1982, 21 (03): : 91 - 94
  • [4] LOW NOISE AND HIGH POWER GaAs MESFETs.
    Nakatani, Masaaki
    Ohtsubo, Mutsuyuki
    Ishii, Takashi
    Denshi Tokyo/Electron Tokyo, 1979, (18): : 114 - 117
  • [5] Effect of Surface Properties on Electrical Parameters of GaAs MESFETs.
    Sauvage, Didier
    Gueguen, Michele
    Simon, Bernard
    Annales des Telecommunications/Annals of Telecommunications, 1984, 40 (3-4): : 83 - 87
  • [6] GATE-BIAS DEPENDENCE OF THE NOISE SPECTRUM OF GaAs MESFETs.
    Hashiguchi, Sumihisa
    Koike, Tsuyoshi
    Ohkubo, Hideki
    Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E, 1986, E69 (04): : 291 - 293
  • [7] MICROWAVE NOISE CHARACTERIZATION OF GAAS-MESFETS - DETERMINATION OF EXTRINSIC NOISE PARAMETERS
    GUPTA, MS
    GREILING, PT
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (04) : 745 - 751
  • [8] A NEW METHOD FOR THE MEASUREMENT AND ANALYSIS OF NOISE PARAMETERS FOR MESFETS AND HEMTS
    NISHIDA, M
    UDA, H
    HARADA, Y
    INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING, 1993, 3 (03): : 221 - 229
  • [9] EFFECTS OF DEEP LEVELS IN GaAs MESFETs.
    Zylbersztejn, A.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 44 - 49
  • [10] A NEW GENERAL PROCEDURE TO EXTRACT THE NOISE PARAMETERS OF MICROWAVE GAAS-MESFETS
    ARMENISE, MN
    PERRI, AG
    EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS, 1991, 2 (05): : 541 - 545
12345