Spectral linewidth and linewidth enhancement factor in 1.5-μm modulation-doped strained multiple-quantum well lasers

被引：0

作者：

Mawatari, Hiroyasu ^{[1
]}

Kano, Fumiyoshi ^{[1
]}

Yamamoto, Norio ^{[1
]}

Kondo, Yasuhiro ^{[1
]}

Tohmori, Yuichi ^{[1
]}

Yoshikuni, Yuzo ^{[1
]}

机构：

[1] NTT Opto-electronics Lab, Kanagawa, Japan

来源：

| 1600年 / Publ by JJAP, Minato-ku, Japan卷 / 33期

关键词：

Band structure - Energy gap - Laser tuning - Light sources - Semiconductor device manufacture - Semiconductor doping - Semiconductor quantum wells - Strain;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A study of the linewidth enhancement factor (α-parameter) of 1.5-μm modulation-doped strained multiple-quantum-well (MQW) lasers is reported. The α-parameter was effectively decreased with increasing negative detuning. At a detuning of -30 nm, the α-parameter can be reduced to less than 1 by 1×1018 cm-3 p-type modulation doping and 1.4% compressive strain in a Fabry-Perot laser. Applying this structure to a distributed feedback (DFB) laser, we investigate the dependence of the linewidth characteristics on the α-parameter. Finally, in the DFB laser with the cavity length of 1500 μm, the minimum spectral linewidth is lowered to 80 kHz at an output power of 40 mW.

引用

共 50 条

[1] SPECTRAL LINEWIDTH AND LINEWIDTH ENHANCEMENT FACTOR IS 1.5-MU-M MODULATION-DOPED STRAINED MULTIPLE-QUANTUM-WELL LASERS
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[7] THEORETICAL-ANALYSIS OF EXTREMELY SMALL LINEWIDTH ENHANCEMENT FACTOR AND ENHANCED DIFFERENTIAL GAIN IN MODULATION-DOPED STRAINED QUANTUM-WELL LASERS
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