Scanning tunneling and atomic force microscopy study of the misfit layer compounds (LaS)1.14(NbS2)n (n = 1, 2) and [(Pb,Sb)S)]1.14NbS2

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Inst des Materiaux de Nantes, Nantes, France [1 ]
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Surf Sci | / 1-3卷 / 266-276期
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Atomic force microscopy - Carrier concentration - Defects - Image analysis - Morphology - Scanning tunneling microscopy - Sulfur compounds - Surface roughness;
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The misfit layer compounds (LaS)1.14(NbS)n (n = 1, 2) and [(Pb,Sb)S]1.14NbS2 were examined by scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In these compounds the NaCl-type double MS (M = La, Pb, Sb) layers (Q layers) alternate with the NbS2 made up of NbS6 trigonal prisms. It was possible to record AFM and STM images for only the H layers for (LaS)1.14(NbS2)n, but for both the H and Q layers for [(Pb,Sb)S]1.14NbS2. Partial and total electron density plots of the H and Q layers were calculated to interpret the observed STM and AFM images. The bright spots in the STM and AFM images of the H layer correspond to S atoms, and those of the Q layer to Pb and Sb atoms. The STM images for the Q layers of [(Pb,Sb)S]1.14NbS2 suggest that a short-range ordering of the Pb and Sb atoms occurs in the (Pb,Sb)S sheets of the Q layer.
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