Photoemission study of the reactive Dy/GaAs(110) interface

被引：0
|
作者：
Chaika, A.N. [1 ,2 ]
Grazhulis, V.A. [1 ]
Ionov, A.M. [1 ]
Kashkarov, P.K. [2 ]
Molodtsov, S.L. [3 ,4 ]
Shikin, A.M. [3 ,4 ]
Laubschat, C. [4 ]
机构：
[1] Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russia
[2] Moscow State University, 119899 Moscow, Russia
[3] Institute of Physics, St. Petersburg State University, 198904 St. Petersburg, Russia
[4] Institut für Oberflächen- und Mikrostrukturphysik, Technische Universität Dresden, D-01062 Dresden, Germany
来源：
Surface Science | 1999年 / 433卷
关键词：
Number:; 95-2.6; SAS N95-1.4; Acronym:; -; Sponsor:; N96-02-175532; RFBR; Sponsor: Russian Foundation for Basic Research;
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摘要：
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页码：352 / 356
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