Effect of Isovalent Impurities on the Electrical Inhomogeneity of Indium Arsenide Single Crystals.

被引:0
|
作者
Karataev, V.V.
Yurova, E.S.
Mil'vidskii, M.G.
Fridshtand, E.S.
Nemtsova, G.A.
机构
来源
Neorganiceskie materialy | 1985年 / 21卷 / 10期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1631 / 1635
相关论文
共 50 条
  • [1] INFLUENCE OF ISOVALENT IMPURITIES ON THE ELECTRICAL INHOMOGENEITY OF INDIUM ARSENIDE SINGLE-CRYSTALS
    KARATAEV, VV
    YUROVA, ES
    MILVIDSKII, MG
    FRIDSHTAND, ES
    NEMTSOVA, GA
    INORGANIC MATERIALS, 1985, 21 (10) : 1425 - 1429
  • [2] ELECTRICAL TRANSPORT PROPERTIES OF INDIUM SELENIDE SINGLE CRYSTALS.
    Hussein, S.A.
    Nagat, A.T.
    Hafez, A.M.
    Gameel, Y.H.
    Belal, A.A.
    Indian Journal of Pure and Applied Physics, 1987, 25 (7-8): : 278 - 281
  • [3] GENERATION OF ELECTRICAL PULSES IN INDIUM SELENIDE SINGLE CRYSTALS.
    Abdinov, A.Sh.
    Kyazym-zade, A.G.
    Akhmedov, A.A.
    1600, (10):
  • [4] ANOMALOUS CHANGES IN THE PROPERTIES OF TELLURIUM-DOPED INDIUM ARSENIDE SINGLE CRYSTALS.
    Semikolenova, N.A.
    Soviet physics journal, 1984, 27 (05): : 394 - 399
  • [5] FINE STRUCTURE OF DIAMAGNETIC EXCITONS IN INDIUM ARSENIDE CRYSTALS.
    Varfolomeev, A.V.
    Seisyan, R.P.
    Efros, Al.L.
    Yakimova, R.N.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1977, 11 (06): : 631 - 633
  • [6] PHOTOTRIGGER EFFECT IN INDIUM AND GALLIUM SELENIDE SINGLE CRYSTALS.
    Abdinov, A.Sh.
    Akperov, Ya.g.
    Mamedov, V.K.
    Salaev, El'.Yu.
    Soviet physics. Semiconductors, 1980, 14 (04): : 440 - 442
  • [7] CHARACTERISTICS OF DEFECT FORMATION IN EPITAXIAL GALLIUM-ARSENIDE CONTAINING INDIUM ISOVALENT IMPURITIES
    KOLCHENKO, TI
    LOMAKO, VM
    RODIONOV, AV
    SVESHNIKOV, YN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (04): : 391 - 393
  • [8] ELECTRICAL PROPERTIES OF GALLIUM ARSENIDE DOPED WITH ISOVALENT IMPURITIES (GaAs:Sb, GaAs:In).
    Solov'eva, E.V.
    Rytova, N.S.
    Mil'vidskii, M.G.
    Ganina, N.V.
    Soviet physics. Semiconductors, 1981, 15 (11): : 1243 - 1246
  • [9] EFFECT OF TITANIUM ADDITIONS ON PHASE TRANSITIONS IN MANGANESE ARSENIDE SINGLE CRYSTALS.
    Govor, G.A.
    Physica Status Solidi (A) Applied Research, 1986, 97 (02):
  • [10] Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium
    Pavlov, D. A.
    Bidus, N. V.
    Bobrov, A. I.
    Vikhrova, O. V.
    Volkova, E. I.
    Zvonkov, B. N.
    Malekhonova, N. V.
    Sorokin, D. S.
    SEMICONDUCTORS, 2015, 49 (01) : 1 - 3