Formation of ultrahigh density Ge nanodots on oxidized Ge/Si(111) surfaces

被引：0
|
作者：
Nakamura, Yoshiaki [1 ,2 ]
Nagadomi, Yasushi [1 ]
Sugie, Kaoru [1 ]
Miyata, Noriyuki [3 ]
Ichikawa, Masakazu [1 ,2 ]
机构：
[1] Department of Applied Physics, Graduate School of Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
[2] CREST, Japan Sci./Technology Corporation, Japan
[3] Natl. Inst. Adv. Indust. Sci./T., Tsukuba, Ibaraki, 305-8562, Japan
来源：
Journal of Applied Physics | 2004年 / 95卷 / 09期
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页码：5014 / 5018
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