Characterization of ZnSe homo-interface grown by MBE

被引:0
|
作者
Sumitomo Electric Industries, Ltd, Osaka, Japan [1 ]
机构
来源
Appl Surf Sci | / 489-494期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Characterization of ZnSe homo-interface grown by MBE
    Nakanishi, F
    Doi, H
    Yamada, T
    Matsuoka, T
    Nishine, S
    Matsumoto, K
    Shirakawa, T
    APPLIED SURFACE SCIENCE, 1997, 117 : 489 - 494
  • [2] Characterization of structural defects in MBE grown ZnSe
    Worschech, L
    Ossau, W
    Fischer, C
    Schafer, H
    Landwehr, G
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3): : 29 - 32
  • [3] LOW INTERFACE STATE DENSITY AT THE MBE GROWN, THERMALLY ANNEALED ZNSE/GAAS INTERFACE
    QIAN, QD
    QIU, J
    MELLOCH, MR
    COOPER, JA
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    KOBAYASHI, M
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 79 - 82
  • [4] LOW INTERFACE STATE DENSITY AT THE MBE GROWN, THERMALLY ANNEALED ZNSE/GAAS INTERFACE
    QIAN, QD
    QIU, J
    MELLOCH, MR
    COOPER, JA
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    KOBAYASHI, M
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 79 - 82
  • [5] CHARACTERIZATION OF HETEROEPITAXIAL ZNSE GROWN BY MBE ON GAAS, ALAS AND INGAAS
    SKROMME, BJ
    TAMARGO, MC
    TURCO, FS
    SHIBLI, SM
    BONNER, WA
    NAHORY, RE
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 205 - 210
  • [6] CHARACTERIZATION OF HETEROEPITAXIAL ZNSE GROWN BY MBE ON GAAS, ALAS AND INGAAS
    SKROMME, BJ
    TAMARGO, MC
    TURCO, FS
    SHIBLI, SM
    BONNER, WA
    NAHORY, RE
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 205 - 210
  • [7] HOMO-EPITAXIAL GROWTH OF ZNSE BY MBE
    OHISHI, M
    OHMORI, K
    FUJII, Y
    SAITO, H
    TIONG, S
    JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 324 - 328
  • [8] Homo-epitaxial growth of ZnSe by MBE
    Nakanishi, F
    Yamada, T
    Nishine, S
    Shirakawa, T
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 340 - 343
  • [9] PROPERTIES OF INTERFACE STATES AT COMPOUND SEMICONDUCTOR HOMO-INTERFACE AND HETERO-INTERFACE
    HASEGAWA, H
    IKEDA, E
    OHTSUKA, S
    SAITOH, T
    OHNO, H
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S31 - S32
  • [10] Interface defects and their effect on the electrical properties of ZnSe/GaAs heterojunctions grown by MBE
    Seghier, D.
    Hauksson, I.S.
    Gislason, H.P.
    Prior, K.A.
    Cavenett, B.C.
    Materials Science Forum, 1997, 258-263 (pt 3): : 1383 - 1388