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- [1] Generalized trapping kinetic model for the oxide degradation after Fowler-Nordheim uniform gate stress (vol 82, pg 2548, 1997)JOURNAL OF APPLIED PHYSICS, 1998, 83 (05) : 2869 - 2869Pananakakis, GGhibaudo, GPapadas, CVincent, EKies, R
- [2] Generalized trapping kinetic model for the oxide degradation after Fowler-Nordheim uniform gate stress J Appl Phys, 5 (2548):
- [3] Generalized trapping kinetic model for the oxide degradation after Fowler-Nordheim uniform gate stressJOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2548 - 2557Pananakakis, CGhibaudo, GPapadas, CVincent, EKies, R
- [5] Erratum: 'reconstructed (881) Si surface structure observed by scanning tunneling microscopy' [J. Appl. Phys. 82, 6031 (1997)]1998, (84)Kawamura, TsutomuKojima, ShiroKanzawa, Tomohide
- [6] Erratum: `Bulk damage effects in irradiated silicon detectors due to clustered divacancies' [J. Appl. Phys. 82, 126 (1997)]Journal of Applied Physics, 85 (11):Gill, K.Hall, G.MacEvoy, B.
- [8] Comment on "A model of hole trapping in SiO2 films on silicon" [J. Appl. Phys. 81, 6822 (1997)]JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) : 5591 - 5592Devine, RABWarren, WLKarna, S
- [9] Erratum: 'high accuracy Raman measurements using the Stokes and anti-Stokes lines' [J. Appl. Phys. 82, 3976 (1997)]Journal of Applied Physics, 1998, 83 (10):Trzeciakowski, WitoldMartinez-Pastor, JuanCantanero, Andres
- [10] Gate oxide degradation due to trapping of positive charges during Fowler-Nordheim stress at low electron fluence: A rigorous model1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 621 - 623Samanta, PSarkar, CK