Composition modulation in quantum wire structures on vicinal (110) GaAs studied by photoluminescence

被引：0
|
作者：
Inoue, Koichi [1 ]
Huang, Hu Kun [1 ]
Takeuchi, Misaichi [1 ]
Kimura, Kenta [1 ]
Nakashima, Hisao [1 ]
Iwane, Masaaki [1 ]
Matsuda, Osamu [1 ]
Murase, Kazuo [1 ]
机构：
[1] Osaka Univ, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 2 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1342 / 1344
相关论文
共 50 条
  • [1] COMPOSITION MODULATION IN QUANTUM-WIRE STRUCTURES ON VICINAL (110)GAAS STUDIED BY PHOTOLUMINESCENCE
    INOUE, K
    HUANG, HK
    TAKEUCHI, M
    KIMURA, K
    NAKASHIMA, H
    IWANE, M
    MATSUDA, O
    MURASE, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B): : 1342 - 1344
  • [2] FORMATION AND PHOTOLUMINESCENCE OF QUANTUM WIRE STRUCTURES ON VICINAL (110) GAAS SUBSTRATES BY MBE
    INOUE, K
    KIMURA, K
    MAEHASHI, K
    HASEGAWA, S
    NAKASHIMA, H
    IWANE, M
    MATSUDA, O
    MURASE, K
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 1041 - 1044
  • [3] Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates
    Nishida, T
    Maehashi, K
    Ota, T
    Kobayashi, K
    Nakashima, H
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 171 - 173
  • [4] Photoluminescence of modulation doped GaAs quantum wires on vicinal GaAs (110) substrates
    Inst. of Sci. and Indust. Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
    Microelectron Eng, 1 (171-173):
  • [5] Photoluminescence of InAs quantum wires on vicinal GaAs(110) surfaces
    Bando, K
    Torii, S
    Shim, BR
    Ota, T
    Maehashi, K
    Kobayashi, K
    Nakashima, H
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 163 - 165
  • [6] The carrier dynamics in single layer and stacked GaAs quantum wires formed on vicinal GaAs (110) substrates studied by time-resolved photoluminescence
    Ota, T
    Inoue, Y
    Minami, M
    Maehashi, K
    Nakashima, H
    Watatani, C
    Edamatsu, K
    Itoh, T
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1325 - 1326
  • [7] Photoluminescence study of quantum-wire arrays grown on vicinal(111)B GaAs substrate
    Zou, LF
    Acosta-Ortiz, SE
    Zou, LX
    Luna, RE
    Perez-Herrera, GA
    Regalado, LE
    3RD IBEROAMERICAN OPTICS MEETING AND 6TH LATIN AMERICAN MEETING ON OPTICS, LASERS, AND THEIR APPLICATIONS, 1999, 3572 : 525 - 528
  • [8] Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates
    Shim, BR
    Torii, S
    Ota, T
    Kobayashi, K
    Maehashi, K
    Nakashima, H
    Lee, SY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S599 - S603
  • [9] PIEZOELECTRIC FIELDS IN STRAINED (IN,GA)AS/GAAS MULTIPLE-QUANTUM-WELL STRUCTURES GROWN ON VICINAL(110) GAAS
    SUN, DC
    TOWE, E
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 466 - 470
  • [10] Micro-photoluminescence spectroscopy of single (Al, Ga)As quantum wires grown on vicinal GaAs (110) surfaces
    Ota, T
    Maehashi, K
    Christen, J
    Oto, K
    Murase, K
    Nakashima, H
    PHYSICA E, 2001, 11 (2-3): : 228 - 232
12345