Low field transport properties of two-dimensional electron gas in selectively doped N-AlGaAs/GaInAs/GaAs pseudomorphic structures

被引：0

作者：

Luo, Ji-Kui ^{[1
]}

Ohno, Hideo ^{[1
]}

Matsuzaki, Kenichiro ^{[1
]}

Hasegawa, Hideki ^{[1
]}

机构：

[1] Hokkaido Univ, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 10期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1831 / 1840

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[1] LOW FIELD TRANSPORT-PROPERTIES OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED N-ALGAAS/GAINAS/GAAS PSEUDOMORPHIC STRUCTURES
LUO, JK
OHNO, H
MATSUZAKI, K
HASEGAWA, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (10): : 1831 - 1840
[2] Two-dimensional electron transport in selectivity doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures
Bhattacharyya, Keya
Orwa, J.O.
Goodnick, S.M.
Journal of Applied Physics, 1993, 73 (09):
[3] LOW-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED PSEUDOMORPHIC N-ALGAAS/GALNAS/GAAS STRUCTURES
OHNO, H
LUO, JK
MATSUZAKI, K
HASEGAWA, H
APPLIED PHYSICS LETTERS, 1989, 54 (01) : 36 - 38
[4] 2-DIMENSIONAL ELECTRON-TRANSPORT IN SELECTIVELY DOPED N-ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES
BHATTACHARYYA, K
ORWA, JO
GOODNICK, SM
JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) : 4396 - 4403
[5] Transport Properties and photoluminescence of the Two-Dimensional Electron Gas at the pseudomorphic quantum wells N-AlGaAs/InGaAs/GaAs
Mokerov, VG
Fedorov, YV
Guk, AV
Khabarov, YV
DOKLADY AKADEMII NAUK, 1998, 362 (03) : 335 - 338
[6] TWO-DIMENSIONAL ELECTRON GAS IN MBE GROWN SELECTIVELY DOPED GaAs/N-AlGaAs HETEROSTRUCTURES.
Jiang Pihuan
Li Yuexia
Yang Fuhua
Wang Xinghua
1600, (07):
[7] TWO-DIMENSIONAL ELECTRON-GAS IN MBE-GROWN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES
JIANG, PH
LI, YX
YANG, FH
WANG, XH
CHINESE PHYSICS, 1986, 6 (03): : 783 - 785
[8] Optical properties of the two-dimensional electron gas in the N-AlGaAs/GaAs heterostructures
Mokerov, VG
Fedorov, YV
Guk, AV
Khabarov, YV
DOKLADY AKADEMII NAUK, 1996, 348 (05) : 608 - 610
[9] IMPROVEMENT OF TWO-DIMENSIONAL ELECTRON-GAS CONCENTRATION IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES BY ATOMIC PLANAR DOPING
ISHIKAWA, T
OGASAWARA, K
NAKAMURA, T
KURODA, S
KONDO, K
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1937 - 1940
[10] PARALLEL ELECTRON-TRANSPORT AND FIELD EFFECTS OF ELECTRON DISTRIBUTIONS IN SELECTIVELY-DOPED GAAS/N-ALGAAS
INOUE, M
INAYAMA, M
HIYAMIZU, S
INUISHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04): : L213 - L215

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