Dynamic disordering process in Si during high dose rate B+ ion beam implantation

被引：0
|
作者：
Shukuri, Shoji [1 ]
Tamura, Masao [1 ]
Wada, Yasuo [1 ]
机构：
[1] Hitachi Ltd, Japan
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1988年 / B33卷 / 1-4期
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摘要：
10
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页码：772 / 775
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