Defect engineering radiation tolerant silicon detectors

被引：0
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作者：
MacEvoy, B.C. [1 ]
Watts, S.J. [1 ]
机构：
[1] Imperial Coll, London, United Kingdom
来源：
Diffusion and Defect Data Pt.B: Solid State Phenomena | 1997年 / 57-58卷
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页码：221 / 232
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