DEVELOPMENT OF LASER DIODES BY MBE WITH IN-FREE SUBSTRATE MOUNTING METHOD.

被引：0
|
作者：
Ishida, Yuhdzi [1 ]
Mushiage, Masato [1 ]
Fukada, Hayami [1 ]
Muranishi, Masayoshi [1 ]
Tanaka, Haruo [1 ]
机构：
[1] ROHM Co, Kyoto, Jpn, ROHM Co, Kyoto, Jpn
来源：
Shinku/Journal of the Vacuum Society of Japan | 1985年 / 28卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
5
引用
收藏
页码：759 / 762
相关论文
共 16 条
  • [1] Aluminum free nitride laser diodes grown by plasma assisted MBE
    Skierbiszewski, C.
    Muziol, G.
    Turski, H.
    Siekacz, M.
    2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2016,
  • [2] Development of a novel mounting method for the fabrication of Pb-salt laser grown on [110] oriented BaF2 substrate
    Ray, D
    Bondili, S
    Jain, S
    Li, D
    Zhao, F
    Majumdar, A
    Guan, Z
    Shi, Z
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (1-4) : 373 - 375
  • [3] MBE fabrication of III-N-based laser diodes and its development to industrial system
    Skierbiszewski, C.
    Siekacz, M.
    Turski, H.
    Muziol, G.
    Sawicka, M.
    Perlin, P.
    Wasilewski, Z. R.
    Porowski, S.
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 278 - 282
  • [4] Investigations of emission behavelour for laser printers and copiers -: Development of a test method.
    Rockstroh, J
    Jann, O
    Wilke, O
    Noske, R
    Brödner, D
    Kalus, S
    Schneider, U
    Krocker, C
    Horn, W
    MATERIALPRUFUNG, 2004, 46 (09): : 465 - 471
  • [5] GaN-based violet laser diodes grown on free-standing GaN substrate
    张立群
    张书明
    江德生
    王辉
    朱建军
    赵德刚
    刘宗顺
    杨辉
    Chinese Physics B, 2009, 18 (12) : 5350 - 5353
  • [6] GaN-based violet laser diodes grown on free-standing GaN substrate
    Zhang Li-Qun
    Zhang Shu-Ming
    Jiang De-Sheng
    Wang Hui
    Zhu Jian-Jun
    Zhao De-Gang
    Liu Zong-Shun
    Yang Hui
    CHINESE PHYSICS B, 2009, 18 (12) : 5350 - 5353
  • [7] New development of frozen buffer-free crystal mounting method for the longer wavelength SAD phasing
    Watanabe, Nobuhisa
    Kitago, Yu
    Tanaka, Isao
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2008, 64 : C312 - C313
  • [8] Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. sapphire substrate
    Yoshida, Harumasa
    Takagi, Yasufumi
    Kuwabara, Masakazu
    Amano, Hiroshi
    Kan, Hirofumi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (9A): : 5782 - 5784
  • [9] Entirely crack-free ultraviolet GaN/AlGaN laser diodes grown on 2-in. Sapphire substrate
    Yoshida, Harumasa
    Takagi, Yasufumi
    Kuwabara, Masakazu
    Amano, Hiroshi
    Kan, Hirofumi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (9 A): : 5782 - 5784
  • [10] Fabrication of Vertical AlGaN-Based Ultraviolet-B Laser Diodes Using a Substrate Exfoliation Method with Water
    Nishibayashi, Toma
    Kondo, Ryosuke
    Matsubara, Eri
    Yamada, Ryoya
    Miyake, Rintaro
    Sasaki, Yusuke
    Imoto, Yoshinori
    Iwayama, Sho
    Takeuchi, Tetsuya
    Kamiyama, Satoshi
    Miyake, Hideto
    Iwaya, Motoaki
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (11):
12