Accurate HJFET capacitance-voltage model for implementation with a circuit simulator

被引：0
|
作者：
NEC Corp, Ibaraki, Japan [1 ]
机构：
来源：
IEEE Trans Electron Devices | / 3卷 / 373-378期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] An accurate HJFET capacitance-voltage model for implementation with a circuit simulator
    Matsuno, N
    Yano, H
    Hida, H
    Maeda, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (03) : 373 - 378
  • [2] An accurate HJFET current-voltage model including temperature dependence for a circuit simulator
    Matsuno, N
    Yano, H
    Hida, H
    Maeda, T
    SOLID-STATE ELECTRONICS, 1999, 43 (05) : 977 - 984
  • [3] A Simple, Accurate Capacitance-Voltage Model of Undoped Silicon Nanowire MOSFETs
    Lin, Shihuan
    Zhou, Xing
    See, Guan Huei
    Zhu, Guojun
    Wei, Chengqing
    Zhang, Junbin
    Chen, Zuhui
    NANOTECH CONFERENCE & EXPO 2009, VOL 3, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: BIOFUELS, RENEWABLE ENERGY, COATINGS FLUIDICS AND COMPACT MODELING, 2009, : 643 - 646
  • [4] A Capacitance-Voltage model for DG-TFET
    Biswas, Arnab
    Ionescu, Adrian M.
    2015 SILICON NANOELECTRONICS WORKSHOP (SNW), 2015,
  • [5] Accurate capacitance-voltage characterization of organic thin films with current injection*
    Chu, Ming
    Liu, Shao-Bo
    Yu, An-Ran
    Yu, Hao-Miao
    Qin, Jia-Jun
    Yi, Rui-Chen
    Pei, Yuan
    Zhu, Chun-Qin
    Zhu, Guang-Rui
    Qi-Zeng
    Hou, Xiao-Yuan
    CHINESE PHYSICS B, 2021, 30 (08)
  • [6] MODEL FOR THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MODFET'S.
    Park, Kwangman
    Kim, Hong Bae
    Kwack, Kae Dal
    IEEE Transactions on Electron Devices, 1987, ED-34 (12)
  • [7] Fluctuation Model of the Capacitance-Voltage Characteristic of MDS Structure
    Men'shikova, T. G.
    Bormontov, A. E.
    TECHNICAL PHYSICS LETTERS, 2010, 36 (05) : 422 - 425
  • [8] AN ACCURATE DC MODEL OF 2-DEG FET FOR IMPLEMENTATION ON A CIRCUIT SIMULATOR
    HIDA, H
    ITOH, T
    OHATA, K
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) : 393 - 395
  • [9] Capacitance-voltage characteristics of InAs dots: A simple model
    Chiquito, AJ
    Pusep, YA
    Mergulhao, S
    Galzerani, JC
    BRAZILIAN JOURNAL OF PHYSICS, 2002, 32 (03) : 784 - 789
  • [10] New capacitance-voltage model for linearly graded junction
    Boukredimi, Assia
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (02) : 477 - 489
12345