Doped Ba0.6Sr0.4TiO3 thin films for microwave device applications at room temperature

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作者：
Wu, Huey-Daw [1 ]
Barnes, Frank S. [1 ]
机构：
[1] Univ of Colorado, Boulder, United States
来源：
Integrated Ferroelectrics | 1998年 / 22卷 / 1 -4 pt 2期
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页码：291 / 305
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