L-BAND MICROSTRIP LOW-NOISE AMPLIFIER.

被引：0
|
作者：
Verma, Ramni
Revankar, U.K.
机构：
来源：
IETE Journal of Research | 1982年 / 28卷 / 07期
关键词：
D O I：
10.1080/03772063.1982.11452746
中图分类号：
TN7 [基本电子电路];
学科分类号：
080902 ;
摘要：
An amplifier was designed and fabricated at 1. 3 GHz for narrowband applications. Microstripline construction on teflon fiber glass is employed. The amplifier has achieved minimum noise figure of 1. 8 db and 26 db gain in the frequency band 1. 2 to 1. 4 GHz. This amplifier is useful as a front-end amplifier in a radar receiver system. Design, construction and performance of the amplifier are presented.
引用
收藏
页码：370 / 373
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