Origin of the bimodal distribution of low-pressure metal-organic-vapor- phase-epitaxy grown InGaAs/GaAs quantum dots

被引：0
|
作者：
机构：
[1] Saint-Girons, G.
[2] Patriarche, G.
[3] Mereuta, A.
[4] Sagnes, I.
来源：
Saint-Girons, G. | 1600年 / American Institute of Physics Inc.卷 / 91期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
    Saint-Girons, G
    Patriarche, G
    Mereuta, A
    Sagnes, I
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) : 3859 - 3863
  • [2] Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
    Saint-Girons, G
    Patriarche, G
    Largeau, L
    Coelho, J
    Mereuta, A
    Moison, JM
    Gérard, JM
    Sagnes, I
    APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2157 - 2159
  • [3] Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy
    Höglund, L
    Petrini, E
    Asplund, C
    Malm, H
    Andersson, JY
    Holtz, PO
    APPLIED SURFACE SCIENCE, 2006, 252 (15) : 5525 - 5529
  • [4] Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening
    Saint-Girons, G., 1600, American Institute of Physics Inc. (91):
  • [5] Photoluminescence quenching of a low-pressure metal-organic vapor-phase-epitaxy grown quantum dots array with bimodal inhomogeneous broadening
    Saint-Girons, G
    Sagnes, I
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) : 10115 - 10118
  • [6] High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy
    Sagnes, I
    Prévot, I
    Patriarche, G
    Le Roux, G
    Gayral, B
    Lemaître, A
    Gérard, JM
    JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 524 - 529
  • [7] Aluminum incorporation into AlGaN grown by low-pressure metal organic vapor phase epitaxy
    Huang, G. S.
    Yao, H. H.
    Lu, T. C.
    Kuo, H. C.
    Wang, S. C.
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (10)
  • [8] ZnMgO quantum dots grown by low-pressure metal organic chemical vapor deposition
    Zeng, Y. J.
    Ye, Z. Z.
    Lu, Y. F.
    Lu, J. G.
    Sun, L.
    Xu, W. Z.
    Zhu, L. P.
    Zhao, B. H.
    Che, Y.
    APPLIED PHYSICS LETTERS, 2007, 90 (01)
  • [9] Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy
    Hudait, MK
    Krupanidhi, SB
    MATERIALS RESEARCH BULLETIN, 2000, 35 (01) : 125 - 133
  • [10] Self-assembled InGaAs dots grown on GaP (001) substrate by low-pressure organometallic vapor phase epitaxy
    Fuchi, S
    Nonogaki, Y
    Moriya, H
    Koizumi, A
    Fujiwara, Y
    Takeda, Y
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4): : 855 - 859
12345