LOW-TEMPERATURE ELECTRICAL CHARACTERISTICS OF THE Au/Si INTERFACE.

被引：0
|
作者：
Tran, A. [1 ]
Yang, C.Y. [1 ]
Gao, M. [1 ]
Kim, N. [1 ]
Cooley, R.F. [1 ]
机构：
[1] Siliconix Inc, Santa Clara, CA, USA, Siliconix Inc, Santa Clara, CA, USA
来源：
Metallurgical transactions. A, Physical metallurgy and materials science | 1987年 / 18 A卷 / 05期
关键词：
INTEGRATED CIRCUIT PACKAGING - NMOS DEVICES - SCHOTTKY JUNCTION;
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摘要：
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页码：701 / 705
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