ELECTRONIC AND MAGNETIC PROPERTIES OF TRANSITION METAL DICHALCOGENIDE INTERCALATION COMPLEXES.

被引:0
|
作者
Friend, R.H.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
The transition metal dichalcogenides possess a layer structure, and are known to accept a wide variety of electron donor species between layers to form intercalation complexes. Three aspects of the magnetic properties of these systems are considered here. First, the changes in band paramagnetism that can be achieved by the increase in the host material conduction band filling on intercalation are considered. Second, carrier localization, and the formation of local moments, can be induced in systems with strong charge density waves distortions. The system 1T-TaS//2 plus hydrazine is discussed. Third, for the intercalaction complexes formed with the 3-d transition metals, the local moments present on the 3-d metal ions show a variety of magnetic ordering which are mediated through the conduction electrons in the host layers. Recent polarized neutron experiments are discussed.
引用
收藏
页码:593 / 598
相关论文
共 50 条
  • [1] THE ELECTRONIC AND MAGNETIC-PROPERTIES OF TRANSITION-METAL DICHALOGENIDE INTERCALATION COMPLEXES
    FRIEND, RH
    PHYSICA B & C, 1983, 117 (MAR): : 593 - 598
  • [2] ELECTRONIC-PROPERTIES OF INTERCALATION COMPLEXES OF THE TRANSITION-METAL DICHALCOGENIDES
    FRIEND, RH
    YOFFE, AD
    ADVANCES IN PHYSICS, 1987, 36 (01) : 1 - 94
  • [3] Metal dichalcogenide nanomeshes: structural, electronic and magnetic properties
    Helal, Mohamed A.
    El-Sayed, H. M.
    Maarouf, Ahmed A.
    Fadlallah, Mohamed M.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2021, 23 (37) : 21183 - 21195
  • [4] Strain engineering of electronic properties of transition metal dichalcogenide monolayers
    Maniadaki, Aristea E.
    Kopidakis, Georgios
    Remediakis, Ioannis N.
    SOLID STATE COMMUNICATIONS, 2016, 227 : 33 - 39
  • [5] Magnetic and topological properties in hydrogenated transition metal dichalcogenide monolayers
    Feng, Liang-Ying
    Villaos, Rovi Angelo B.
    Cruzado, Harvey N.
    Huang, Zhi-Quan
    Hsu, Chia-Hsiu
    Hsueh, Hung-Chung
    Lu, Hsin
    Chuang, Feng-Chuan
    CHINESE JOURNAL OF PHYSICS, 2020, 66 : 15 - 23
  • [6] The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions
    An, Yipeng
    Zhang, Mengjun
    Wu, Dapeng
    Fu, Zhaoming
    Wang, Kun
    JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (46) : 10962 - 10966
  • [7] Electronic structure properties of transition metal dichalcogenide nanotubes: a DFT benchmark
    Rocha, Rafael de Alencar
    da Cunha, Wiliam Ferreira
    Ribeiro, Luiz Antonio, Jr.
    JOURNAL OF MOLECULAR MODELING, 2019, 25 (09)
  • [8] The electronic transport properties of transition-metal dichalcogenide lateral heterojunctions
    An Y.
    Zhang M.
    Wu D.
    Fu Z.
    Wang K.
    An, Yipeng (ypan@htu.edu.cn), 1600, Royal Society of Chemistry (04) : 10962 - 10966
  • [9] Electronic structure properties of transition metal dichalcogenide nanotubes: a DFT benchmark
    Rafael de Alencar Rocha
    Wiliam Ferreira da Cunha
    Luiz Antonio Ribeiro
    Journal of Molecular Modeling, 2019, 25
  • [10] Geometrical and electronic properties of unstrained and strained transition metal dichalcogenide nanotubes
    Oshima, Shuntaro
    Toyoda, Masayuki
    Saito, Susumu
    PHYSICAL REVIEW MATERIALS, 2020, 4 (02):