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- [3] MINORITY-CARRIER LIFETIME IN ALXGA1-XAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 822 - 826
- [4] Quantum Hall effect in long and in mobility adjusted GaAs/AlxGa1-xAs samples PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (02): : 276 - 283
- [6] ZINC INCORPORATION IN ALXGA1-XAS AND GAAS EPITAXIAL LAYERS KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (07): : K35 - K36
- [8] Improvement of Minority Carrier Lifetime in GaAs/AlxGa1-xAs Core-shell Nanowires 2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012), 2012, : 33 - 34
- [9] MODULATION-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH PARALLEL CONDUCTING LAYER IN ALXGA1-XAS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 145 (02): : K111 - K114