CVD TUNGSTEN AND TUNGSTEN SILICIDE FOR VLSI APPLICATIONS.

被引：0

作者：

Suresh Sachdev ^{[1
]}

Castellano, Robert ^{[1
]}

机构：

[1] Genus, Mountain View, CA, USA, Genus, Mountain View, CA, USA

来源：

Semiconductor International | 1985年 / 8卷 / 05期

关键词：

FILMS - Conducting - TUNGSTEN AND ALLOYS - Vapor Deposition;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In VLSI technology, scaling down of devices is done to improve chip density and device performance. This results in new and stringent requirements on materials used for gate interconnects, contacts and metal interconnects. New materials with better deposition methodologies, like CVD tungsten and tungsten silicide, exhibiting superior properties, can be retrofitted onto devices to enhance their performance.

引用

页码：306 / 310

共 50 条

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