INVESTIGATION OF CONCENTRATION PROFILES IN FILMS OF SOLID SOLUTIONS.

Calculations are made of the distributions of the components over the thickness of films of solid solutions A//1**I**I**IB**V-A//2**I**I**IB**V, obtained by the forced cooling of a melt of A//1**I**I**I-A//2**I**I**IB//V. It is shown that, from an analysis of the diagrams of state of such systems, by the appropriate selection of the crystallization conditions it is possible to obtain rising and homogeneous distributions of the high-melting component. For the systems Ga-Al-As, Ga-Al-P, In-Ga-P, curves are plotted, determining the crystallization conditions under which such distributions are realized. A comparison is made between distributions obtained for the system Ga-Al-As and experimental distributions. Sufficiently good agreement is noted.