High-mobility p-channel metal-oxide-semiconductor field-effect-transistor on strained Si

被引：0
|
作者：
Nayak, Deepak K. [1 ]
Woo, Jason C.S. [1 ]
Park, Jin S. [1 ]
Wang, Kang L. [1 ]
MacWilliams, Ken P. [1 ]
机构：
[1] Univ of Tokyo, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 4 B期
关键词：
MOSFET devices;
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学科分类号：
摘要：
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页码：2412 / 2414
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