DETERMINATION OF THE SPECTRUM OF TRAPPING LEVELS IN THIN-FILM ELECTROLUMINESCENT CAPACITORS BASED ON ZnS:Mn.

被引：0

|

作者：

Vasil'chenko, V.P.

Matizen, L.L.

机构：

来源：

| 1600年 / 43期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

收藏

相关论文

共 50 条

[1] Trapping Levels of Carriers in Thin-Film Electroluminescent Structures Based on ZnS
Vasil'chenko, V. P.
Journal of Applied Spectroscopy, 1996, 63 (03)
[2] Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices
Gurin, N. T.
Sabitov, O. Yu.
TECHNICAL PHYSICS, 2006, 51 (08) : 1012 - 1024
[3] MN-IMPLANTED ZNS THIN-FILM ELECTROLUMINESCENT DEVICE
TAKAGI, T
YAMADA, I
SASAKI, A
ISHIBASHI, T
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (11) : 1110 - 1114
[4] Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices
N. T. Gurin
O. Yu. Sabitov
Technical Physics, 2006, 51 : 1012 - 1024
[5] MN-IMPLANTED ZNS THIN-FILM ELECTROLUMINESCENT CELL
TAKAGI, T
YAMADA, I
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (10) : 1587 - &
[6] ERASING CHARACTERISTICS OF A THIN-FILM ELECTROLUMINESCENT ZNS-MN FACEPLATE
SAHNI, O
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (05) : 463 - 468
[7] Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures
Gurin, N. T.
Afanas'ev, A. M.
Sabitov, O. Yu.
Ryabov, D. V.
SEMICONDUCTORS, 2006, 40 (08) : 920 - 933
[8] Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures
N. T. Gurin
A. M. Afanas’ev
O. Yu. Sabitov
D. V. Ryabov
Semiconductors, 2006, 40 : 920 - 933
[9] ERASING CHARACTERISTICS OF A THIN-FILM ELECTROLUMINESCENT ZNS-MN FACEPLATE
SAHNI, O
PROCEEDINGS OF THE SID, 1983, 24 (02): : 123 - 128
[10] Infrared quenching of electroluminescence in ZnS: Mn thin-film electroluminescent structures
N. T. Gurin
D. V. Ryabov
Technical Physics, 2005, 50 : 44 - 54

← 1 2 3 4 5 →