Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

被引：0
|
作者：
Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan [1 ]
机构：
来源：
Appl Phys Lett | / 3卷 / 383-385期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
    Tachibana, K
    Someya, T
    Arakawa, Y
    APPLIED PHYSICS LETTERS, 1999, 74 (03) : 383 - 385
  • [2] InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
    Zhang, J
    Hao, M
    Li, P
    Chua, SJ
    APPLIED PHYSICS LETTERS, 2002, 80 (03) : 485 - 487
  • [3] InP and InAlP self-assembled quantum dots grown by metalorganic chemical vapor deposition
    Ryou, Jae-Hyun
    Dupuis, Russell D.
    Reddy, C.V.
    Narayanamurti, Venkatesh
    Mathes, David T.
    Hull, Robert
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 223 - 226
  • [4] InP and InAlP self-assembled quantum dots grown by metalorganic chemical vapor deposition
    Ryou, JH
    Dupuis, RD
    Reddy, CV
    Narayanamurti, V
    Mathes, DT
    Hull, R
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 223 - 226
  • [5] A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition
    Ji, LW
    Su, YK
    Chang, SJ
    Wu, LW
    Fang, TH
    Xue, QK
    Lai, WC
    Chiou, YZ
    MATERIALS LETTERS, 2003, 57 (26-27) : 4218 - 4221
  • [6] Self-assembled III-phospide quantum dots grown by metalorganic chemical vapor deposition
    Ryou, JH
    Chowdhury, U
    Dupuis, RD
    Reddy, CV
    Narayanamurti, V
    Mathes, DT
    Hull, R
    SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR ALLOYS, 2000, 583 : 39 - 44
  • [7] Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition
    Motlan
    Butcher, KSA
    Goldys, EM
    Tansley, TL
    MATERIALS CHEMISTRY AND PHYSICS, 2003, 81 (01) : 8 - 10
  • [8] Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition
    Reilly, Caroline E.
    Bonef, Bastien
    Nakamura, Shuji
    Speck, James S.
    DenBaars, Steven P.
    Keller, Stacia
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (12)
  • [9] Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
    Hoshino, K
    Kako, S
    Arakawa, Y
    APPLIED PHYSICS LETTERS, 2004, 85 (07) : 1262 - 1264
  • [10] Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure
    Motlan
    Goldys, EM
    APPLIED PHYSICS LETTERS, 2001, 79 (18) : 2976 - 2978
12345