Growth characteristics of SiC in a hot-wall CVD reactor with rotation

被引：0
|
作者：
Zhang, J. [1 ]
Forsberg, U. [1 ]
Isacson, M. [2 ]
Ellison, A. [2 ]
Henry, A. [1 ]
Kordina, O. [1 ]
Janzén, E. [1 ]
机构：
[1] Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
[2] Okmetic AB, Hans Meijers väg 2, SE-583 30 Linköping, Sweden
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Chemical reactors - Chemical vapor deposition - Doping (additives) - Optimization - Silicon carbide - Surface treatment;
D O I：
10.4028/www.scientific.net/msf.389-393.191
中图分类号：
学科分类号：
摘要：
SiC epitaxy has been studied in a horizontal hot-wall CVD reactor with rotation by gas foil levitation. A capacity of three 2 inch wafers has been realized, and the thickness uniformity over a 2 inch wafer is below 1% and the n-doping uniformity over a 35mm wafer, below 10%. Both n- and p-type doping is readily achieved with no memory effect. The layer morphology has been investigated and a featureless surface has been obtained through process optimization and a modification of the hot zone. © 2002 Trans Tech Publications.
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页码：191 / 194
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