Mathematical modelling of exoemission vacancy-migration mechanism in semiconductors

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Breslav, I.B.
Dekhtyar, Yu.D.
Sagalovich, G.L.
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| 1993年 / 09期
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Calculations to mathematically simulate the dependence between temperature and current of exoelectron emission were made on computers, according to a program specially developed in the Fortran 1V language. The most reliable annealing parameters, of pointwise complex defects (PCD) may be obtained only by analysing the ascending branch of the exoemission peak. Parameters of annealing PCDs and of vacancy diffusion have been obtained. By simulating exoelectron emission, it is possible to estimate a necessary time constant for devices used to monitor I.
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页码:68 / 73
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