共 50 条
- [1] INGAAS EPILAYERS OF HIGH IN COMPOSITION GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 28 - 32
- [4] Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy Microelectronics Journal, 28 (8-10): : 743 - 747
- [7] Infrared photoluminescence of InAs/GaAs epilayers grown by molecular beam epitaxy MATERIALS FOR INFRARED DETECTORS, 2001, 4454 : 247 - 253