Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

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[1] [1,Chichibu, S.F.
[2] 1,Onuma, T.
[3] Sota, T.
[4] 2,DenBaars, S.P.
[5] 2,Nakamura, S.
[6] 5,Kitamura, T.
[7] Ishida, Y.
[8] Okumura, H.
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Chichibu, S.F. (chichibu@bk.tsukuba.ac.jp) | 1600年 / American Institute of Physics Inc.卷 / 93期
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