Observation of N-shaped negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor

被引：0
|
作者：
Kim, S.J. [1 ,2 ]
Sugaya, T. [1 ]
Ogura, M. [1 ]
Sugiyama, Y. [1 ]
Tomizawa, K. [3 ]
机构：
[1] Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305-8568, Ibaraki, Japan
[2] New Ener. Indust. Technol. Devmt. O., 3-1-1 Higashi-Ikebukuro, 170-6027, Tokyo, Japan
[3] Meiji University, 1-1-1 Higashimita, Taka-ku, 214-8571, Kawasaki, Japan
来源：
Physica B: Condensed Matter | 1999年 / 272卷 / 01期
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页码：117 / 122
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