Characterization of crystallinity of SiC surface layers produced by ion implantation

被引：0
|
作者：
Theodossiu, E. [1 ]
Baumann, H. [1 ]
Klimenkov, M. [2 ]
Matz, W. [2 ]
Bethge, K. [1 ]
机构：
[1] Institut für Kernphysik, J.W. Goethe-Universität, August-Euler-Str. 6, D-60486 Frankfurt/Main, Germany
[2] Inst. Ionenstrahlphysik M., Forschungszentrum Rossendorf, PO Box 510119, D-01314 Dresden, Germany
来源：
Physica Status Solidi (A) Applied Research | 2000年 / 182卷 / 02期
关键词：
D O I：
10.1002/1521-396X(200012)182:23.0.CO;2-I
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学科分类号：
摘要：
24
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页码：653 / 660
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