High-quality 2″ bulk-like free-standing GaN grown by HydrideVapour phase epitaxy on a Si-doped metal organic vapour phase epitaxial GaN template with an ultra low dislocation density

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[1] [1,Gogova, Daniela
[2] Larsson, Henrik
[3] Kasic, Alexander
[4] Yazdi, Gholam Reza
[5] Ivanov, Ivan
[6] Yakimova, Rositza
[7] Monemar, Bo
[8] Aujol, Eric
[9] Frayssinet, Eric
[10] Faurie, Jean-Pierre
[11] Beaumont, Bernard
[12] Gibart, Pierre
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Gogova, D. | 1600年 / Japan Society of Applied Physics卷 / 44期
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