Superiority of N2O plasma annealing over O2 plasma annealing for amorphous tantalum pentoxide (Ta2O5) films

被引：0
|
作者：
Lau, Wai Shing [1 ]
Perera, Merinnage Tamara Chandima [1 ]
Babu, Premila [1 ]
Ow, Aik Keong [1 ]
Han, Taejoon [1 ]
Sandler, Nathan P. [1 ]
Tung, Chih Hang [1 ]
Sheng, Tan Tsu [1 ]
Chu, Paul K. [1 ]
机构：
[1] Natl Univ of Singapore, Singapore, Singapore
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1998年 / 37卷 / 4 B期
关键词：
D O I：
10.1143/jjap.37.l435
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] The superiority of N2O plasma annealing over O2 plasma annealing for amorphous tantalum pentoxide (Ta2O5) films
    Lau, WS
    Perera, MTC
    Babu, P
    Ow, AK
    Han, T
    Sandler, NP
    Tung, CH
    Sheng, TT
    Chu, PK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (4B): : L435 - L437
  • [2] Two step O2/N2O plasma annealing for the reduction of leakage current in amorphous Ta2O5 films
    Lau, WS
    Perera, MTC
    Han, T
    Sandler, NP
    Tung, CH
    Sheng, TT
    Chu, PK
    Chong, TC
    ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS, 1999, 567 : 501 - 507
  • [3] Comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy
    Natl Univ of Singapore, Singapore, Singapore
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 5 A (2599-2604):
  • [4] Nitrogen plasma annealing for low temperature Ta2O5 films
    Alers, GB
    Fleming, RM
    Wong, YH
    Dennis, B
    Pinczuk, A
    Redinbo, G
    Urdahl, R
    Ong, E
    Hasan, Z
    APPLIED PHYSICS LETTERS, 1998, 72 (11) : 1308 - 1310
  • [5] In-situ low temperature N2O plasma annealing for high-dielectric Ta2O5 thin films
    Um, MY
    Lee, SK
    Kim, HJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S791 - S794
  • [6] Effects of annealing on tantalum pentoxide films in N2 and N2O gas environments
    Houng, MP
    Wang, YH
    Horng, JH
    Huang, RC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (08): : 5079 - 5084
  • [7] Effects of annealing on tantalum pentoxide films in N2 and N2O gas environments
    Houng, Mau-Phon
    Wang, Yeong-Her
    Horng, Jui-Hong
    Huang, Rui-Chang
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (08): : 5079 - 5084
  • [8] Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films
    Lee, JS
    Chang, SJ
    Chen, JF
    Sun, SC
    Liu, CH
    Liaw, UH
    MATERIALS CHEMISTRY AND PHYSICS, 2003, 77 (01) : 242 - 247
  • [9] Reliability properties of Ta2O5 films grown on N2O plasma nitrided silicon
    Novkovski, N.
    Atanassova, E.
    2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2006, : 585 - +
  • [10] A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O-2 or N2O by zero-bias thermally stimulated current spectroscopy
    Lau, WS
    Khaw, KK
    Qian, PW
    Sandler, NP
    Chu, PK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (5A): : 2599 - 2604
12345