Localization effects in InGaN/GaN double heterostructure laser diode structures grown on bulk GaN crystals

被引：0
|
作者：
Czernecki, R. [1 ]
Franssen, G. [2 ]
Suski, T. [2 ]
Świetlik, T. [2 ]
Borysiuk, J. [2 ]
Grzanka, S. [1 ]
Lefebvre, P. [3 ]
Leszczyński, M. [1 ,2 ]
Perlin, P. [1 ,2 ]
Grzegory, I. [1 ,2 ]
Porowski, S. [2 ]
机构：
[1] TopGaN Ltd., Sokolwska 29/37, 01-142 Warsaw, Poland
[2] Institute of High Pressure Physics Unipress, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
[3] Groupe d'Etude des Semiconducteurs-CNRS, Université Montpellier II, Case Courrier 074, F-34095 Montpellier Cedex 5, France
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 10期
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摘要：
16
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页码：7244 / 7249
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