Modeling of silicon carbide crystal growth by physical vapor transport method

被引：4
|
作者：
Ma, R.-H. [1 ]
Chen, Q.-S. [1 ]
Zhang, H. [1 ]
Prasad, V. [1 ]
Balkas, C.M. [2 ]
Yushin, N.K. [2 ]
机构：
[1] Consortium for Crystal Growth Res., Stt. Univ. New York at Stony Brook, Stony Brook, NY 11794-2300, United States
[2] Sterling Semiconductor Inc., Sterling, VA 20166, United States
来源：
Journal of Crystal Growth | 2000年 / 211卷 / 01期
关键词：
D O I：
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中图分类号：
学科分类号：
摘要：
Crystal growth
引用
收藏
页码：352 / 359
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