GaN MOS-HEMT using ultrathin Al2O3 dielectric with fmax of 30.8 GHz

被引：0
|
作者：
Hao, Yue [1 ]
Yue, Yuanzheng [1 ]
Feng, Qian [1 ]
Zhang, Jincheng [1 ]
Ma, Xiaohua [1 ]
Ni, Jinyu [1 ]
机构：
[1] Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 11期
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页码：1674 / 1678
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