Study of CMP lapping technique of ULSI silicon substrate

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作者：
Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China [1 ]
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来源：
Pan Tao Ti Hsueh Pao | 2007年 / SUPPL.卷 / 572-573期
关键词：
Chemical mechanical polishing - Surface active agents - Surface properties - Surface roughness - VLSI circuits;
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暂无
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摘要：
By the analysis to the traditional wafer lapping process, the main factors which effect the wafer's surface quality are concluded, then a new method which apply CMP technique into ULSI silicon substrate lapping process is brought up. This method's purpose is to reduce intense, simplex mechanical effect and increase chemistry. The result is verified by experiment that the rate is increased by 20%, moreover, the surface roughness and damage are reduced effectively.
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