A Molecular Dynamics Simulation on the Subsurface Damage Mechanism in the Nano-polishing Process of Silicon Carbide

被引：0
|
作者：
Hua D. [1 ,2 ]
Zhou Q. [1 ,2 ]
Wang W. [1 ,2 ]
Li S. [1 ,2 ]
Wang Z. [1 ,2 ]
Wang H. [1 ,2 ]
机构：
[1] State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an
[2] Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi’an
来源：
Jixie Gongcheng Xuebao/Journal of Mechanical Engineering | 2024年 / 60卷 / 05期
关键词：
microcrack; molecular dynamics simulation; nano-polishing; silicon carbide; subsurface damage;
D O I：
10.3901/JME.2024.05.231
中图分类号：
学科分类号：
摘要：
The lack of study on the damage mechanism of silicon carbide (SiC) during surface micro/nano-machining limits the machined surface quality of SiC and application. Therefore, it is important to understand the damage mechanism of SiC under different polishing parameters for improving the nano-machined surface quality of SiC. The mechanism of subsurface damage of single crystal SiC during nano-polishing is studied by molecular dynamics simulation, and the effects of polishing speed and depth are considered. The result shows that the removal mechanism of SiC gradually changes from adhesion and ploughing mechanisms to cutting mechanisms with the increase of polishing depth. The microcracks are formed at the tip of the slip band through the fracture of the interlayer Si-Si bond on the slip surface. In addition, the greater polishing depth causes the higher efficiency of the workpiece in absorbing kinetic energy, resulting in the more significant impact of polishing speed on the workpiece temperature and mechanical properties. Therefore, better machined surface quality can be got by smaller polishing depth and larger polishing speed. These results provide new insights into the mechanism of deformation and damage for SiC in nano-polishing experiments, and can guide the design of nano-polishing processes to achieve better SiC surface quality. © 2024 Chinese Mechanical Engineering Society. All rights reserved.
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页码：231 / 240
页数：9
相关论文
共 38 条
  • [1] LI Huihui, CUI Changcai, BIAN Subiao, Et al., Double-sided and single-sided polished 6H-SiC wafers with subsurface damage layer studied by Mueller matrix ellipsometry[J], Journal of Applied Physics, 128, 23, (2020)
  • [2] DENG Jiayun, PAN Jisheng, ZHANG Qixiang, Et al., Research progress in chemical mechanical polishing of single crystal SiC substrates, Diamond & Abrasives Engineering, 40, 1, pp. 80-90, (2020)
  • [3] ZHAO Liang, ZHANG Junjie, PFETZING Janine, Et al., Depth-sensing ductile and brittle deformation in 3C-SiC under Berkovich nanoindentation[J], Materials & Design, 197, (2021)
  • [4] WU Min, HUANG Hui, LUO Qiufa, Et al., A novel approach to obtain near damage-free surface/subsurface in machining of single crystal 4H-SiC substrate using pure metal mediated friction[J], Applied Surface Science, 588, (2022)
  • [5] DENG Hui, ENDO K, YAMAMURA K., Competition between surface modification and abrasive polishing:a method of controlling the surface atomic structure of 4H-SiC (0001)[J], Scientific Reports, 5, (2015)
  • [6] DAI Jianbo, SU Honghua, WANG Zhongbin, Et al., Damage formation mechanisms of sintered silicon carbide during single-diamond grinding[J], Ceramics International, 47, pp. 28419-28428, (2021)
  • [7] KESKIN Y, UNVERDI O, ERBAHAR D, Et al., The role of charge distribution on the friction coefficients of epitaxial graphene grown on the Si-terminated and C-terminated faces of SiC, Carbon, 178, pp. 125-132, (2021)
  • [8] YAN Jiwang, ZHANG Zhiyu, KURIYAGAWA T., Mechanism for material removal in diamond turning of reaction-bonded silicon carbide[J], International Journal of Machine Tools and Manufacture, 49, pp. 366-374, (2009)
  • [9] DAI Chenwei, YIN Zhen, WANG Ping, Et al., Analysis on ground surface in ultrasonic face grinding of silicon carbide (SiC) ceramic with minor vibration amplitude[J], Ceramics International, 47, pp. 21959-21968, (2021)
  • [10] NGUYEN Thai, LIU Dun, THONGKAEW K, Et al., The wear mechanisms of reaction bonded silicon carbide under abrasive polishing and slurry jet impact conditions[J], Wear, 410-411, pp. 156-164, (2018)
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