Hydrogen sensing properties of a Pt-oxide-GaN Schottky diode

被引：0

作者：

Tsai, Yan-Ying ^{[1
]}

Lin, Kun-Wei ^{[2
]}

Chen, Huey-Ing ^{[3
]}

Liu, I-Ping ^{[3
]}

Hung, Ching-Wen ^{[1
]}

Chen, Tzu-Pin ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Chen, Li-Yang ^{[1
]}

Chu, Kuei-Yi ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, No. 1, University Road, Tainan, 70101, Taiwan

[2] Department and Graduate Institute of Computer Science and Information Engineering, Chaoyang University of Technology, No. 168, Jifong East Road, Wufong Township, Taichung, 41349, Taiwan

[3] Department of Chemical Engineering, National Cheng-Kung University, No. 1, University Road, Tainan, 70101, Taiwan

来源：

Journal of Applied Physics | 2008年 / 104卷 / 02期

关键词：

The interesting hydrogen sensing properties of a Pt-oxide-GaN metal-oxide-semiconductor-type Schottky diode are comprehensively studied and demonstrated. In the hydrogen-containing environment; the shift in current-voltage curves and decrease in turn-on voltage are found to be caused by the lowering of Schottky barrier height. Also; the corresponding series resistance is decreased from 191.8 (in air) to 155.3 Ω (for a 9970 ppm H2/air gas) at 30C. As the carrier gas is replaced by a nitrogen gas; a significant variation of 0.32 V and 19.56 Ω in the turn-on voltage Von and series resistance Rs values; respectively; is obtained at 30C; even at an extremely low hydrogen concentration of 4.3 ppm H2/N2. Since the oxygen atoms will be dissolved on the Pt metal surface and react with hydrogen atoms by the formation of hydroxyl and water; the number of adsorbed hydrogen atoms on the Pt surface is reduced. Moreover; the shorter response time constant and the larger initial rate of current density variation are found even at room temperature. © 2008 American Institute of Physics;

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摘要：

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引用

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