Control of solidification front shape during quasi-single crystalline silicon casting process

被引:0
|
作者
机构
[1] Yu, Qing-Hua
[2] Liu, Li-Jun
[3] 1,Zhong, Gen-Xiang
[4] Huang, Xin-Ming
来源
Liu, L.-J. (ljliu@mail.xjtu.edu.cn) | 1600年 / Science Press卷 / 34期
关键词
Ingots - Single crystals - Thermal insulation - Silicon wafers - Crystalline materials - Flow of gases;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] A new form of impurity cluster in casting quasi-single crystalline silicon
    Tang, Shanshan
    Luo, Jinping
    Chang, Chuanbo
    Wang, Quanzhi
    Liu, Lijun
    JOURNAL OF CRYSTAL GROWTH, 2022, 590
  • [2] Optimization via simulation of a seeded directional solidification process for quasi-single crystalline silicon ingots by insulation partition design
    Qi, Xiaofang
    Zhao, Wenhan
    Liu, Lijun
    Yang, Yang
    Zhong, Genxiang
    Huang, Xinming
    JOURNAL OF CRYSTAL GROWTH, 2014, 398 : 5 - 12
  • [3] Reduction of the initial defects generated during casting of quasi-single crystalline silicon by reserving gaps between seed crystals
    Tang, Shanshan
    Qi, Xiaofang
    Chang, Chuanbo
    Wang, Quanzhi
    Liu, Lijun
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2023, 263
  • [4] Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method
    Zhang, Yunfeng
    Li, Zaoyang
    Meng, Qingchao
    Hu, Zhiyan
    Liu, Lijun
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 132 : 1 - 5
  • [5] Iron contamination in cast quasi-single crystalline silicon ingots
    Li, Zaoyang
    Liu, Lijun
    Zhou, Genshu
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
  • [6] Influence of an insulation partition on a seeded directional solidification process for quasi-single crystalline silicon ingot for high-efficiency solar cells
    Ma, Wencheng
    Zhong, Genxiang
    Sun, Lei
    Yu, Qinghua
    Huang, Xinming
    Liu, Lijun
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2012, 100 : 231 - 238
  • [7] Controlling solidification front shape and thermal stress in growing quasi-single-crystal silicon ingots: Process design for seeded directional solidification
    Liu, Lijun
    Yu, Qinghua
    Qi, Xiaofang
    Zhao, Wenhan
    Zhong, Genxiang
    APPLIED THERMAL ENGINEERING, 2015, 91 : 225 - 233
  • [8] Local design of the hot-zone in an industrial seeded directional solidification furnace for quasi-single crystalline silicon ingots
    Yu, Qinghua
    Liu, Lijun
    Ma, Wencheng
    Zhong, Genxiang
    Huang, Xinming
    JOURNAL OF CRYSTAL GROWTH, 2012, 358 : 5 - 11
  • [9] Reusability of contaminated seed crystal for cast quasi-single crystalline silicon ingots
    Li, Zaoyang
    Liu, Lijun
    Zhou, Genshu
    JOURNAL OF CRYSTAL GROWTH, 2015, 416 : 159 - 163
  • [10] Application of a new grain boundary technology for quasi-single crystalline silicon ingots
    Tang, Shanshan
    Qi, Xiaofang
    Chang, Chuanbo
    Wang, Quanzhi
    Liu, Lijun
    JOURNAL OF CRYSTAL GROWTH, 2023, 607