A larger stacked layer number scalable TSV-based 3D-SRAM for high-performance universal-memory-capacity 3D-IC platforms

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作者：
National Tsing Hua University, Taiwan [1 ]
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来源：
IEEE Symp VLSI Circuits Dig Tech Pap | 2011年 / 74-75期
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摘要：
Static random access storage
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