Fabrication and characterization of InP-based quantum cascade distributed feedback lasers with inductively coupled plasma etched lateral gratings

被引：0
|
作者：
Kennedy, Kenneth [1 ]
Revin, Dmitry G. [2 ]
Krysa, Andrey B. [1 ]
Groom, Kristian M. [1 ]
Wilson, Luke R. [2 ]
Cockburn, John W. [2 ]
Hogg, Richard A. [1 ]
机构：
[1] EPSRC National Centre for III-V Technologies, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1l3 JD, United Kingdom
[2] Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期
关键词：
We present details of the fabrication and operating characteristics of quantum cascade distributed feedback lasers with lateral gratings. These devices emit light with a wavelength of ∼10 μm and operate with pulsed drive current above room temperature. InP-based material offers significant advantages over the GaAs system for mid-infrared quantum cascade lasers. High performance; single-mode lasers are achieved using InP-based material grown by metal organic vapor phase epitaxy and utilising double-sided lateral gratings. The deeply etched gratings were made possible by the development of a high aspect ratio; multi-stage; inductively coupled plasma (ICP) etch process; using Cl 2/Ar and SiCl4/Ar gas mixtures. Threshold current density was measured to be ∼5.5 kA/cm2 at a temperature of 293 K. Side mode suppression ratios >20 dB and a tuning coefficient of -0.067 cm -1 K-1 were observed. © 2007 The Japan Society of Applied Physics;
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页码：2424 / 2428
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