Current assisted magnetization switching in (Ga,Mn)As nanodevices

被引：0
|
作者：
Gould, C. [1 ]
Pappert, K. [1 ]
Rüster, C. [1 ]
Giraud, R. [1 ,2 ]
Borzenko, T. [1 ]
Schott, G.M. [1 ]
Brunner, K. [1 ]
Schmidt, G. [1 ]
Molenkamp, L.W. [1 ]
机构：
[1] Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074, Würzburg, Germany
[2] Laboratoire de Photonique et de Nanostructures, CNRS, 91460 Marcoussis, France
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 5 A期
关键词：
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga; Mn)As based devices; but using very dissimilar experimental schemes and device geometries. Here we report on the simultaneous observation of both effects in a single nanodevice; which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store; transport; and manipulate information. © 2006 The Japan Society of Applied Physics;
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Journal article (JA)
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页码：3860 / 3862
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