Composition dependence of Schottky barrier heights and bandgap energies of GaNx As1-x synthesized by ion implantation and pulsed-laser melting

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作者：
Kim, Taeseok [1 ]
Alberi, Kirstin [2 ]
Dubon, Oscar D. [3 ,4 ]
Aziz, Michael J. [1 ]
Narayanamurti, Venkatesh [1 ]
机构：
[1] Harvard School of Engineering and Applied Sciences, Cambridge, MA 02138, United States
[2] National Renewable Energy Laboratory, Golden, CO 80401, United States
[3] Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States
[4] Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States
来源：
Journal of Applied Physics | 2008年 / 104卷 / 11期
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