Bonding and photoluminescence characteristics of GaInAsP/InP membrane structure on silicon-on-insulator waveguides by surface activated bonding

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Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan [1 ]
不详 [2 ]
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Jpn. J. Appl. Phys. | / 8 PART 1卷
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