Segregation trends of the metal alloys Mo-Re and Mo-Pt on HfO2: A first-principles study

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作者：
Knizhnik, A.A. [1 ]
Gavrikov, A.V. [1 ]
Safonov, A.A. [1 ]
Iskandarova, I.M. [1 ]
Bagatur'yants, A.A. [1 ]
Potapkin, B.V. [1 ]
Fonseca, L.R.C. [2 ]
Stoker, M.W. [3 ]
机构：
[1] Kinetic Technologies Ltd., Kurchatov Square, 1, Moscow, 123182, Russia
[2] Center for Semiconductor Components, Universidade Estadual de Campinas, Caixa Postal 6061, Campinas, São Paulo 13083-870, Brazil
[3] Freescale Semiconductor, Inc., 2100 E. Eliott, Tempe, AZ 85284
来源：
Journal of Applied Physics | 2006年 / 100卷 / 01期
关键词：
Using first-principles calculations; we compared the segregation trends at the surface of metal alloys with those at an interface with HfO2. The choice of this oxide was motivated by its significance as a potential replacement for SiO2 in advanced transistors. We considered Mo-Re and Mo-Pt alloys as typical examples of disordered and ordered alloys; respectively. The segregation to the surface/interface was analyzed in terms of metal and oxygen adsorption energies. It is shown that chemical bonding at the metal/oxide interface strongly influences segregation both in Mo-Re and Mo-Pt alloys. In particular; bonding with oxygen atoms at the oxide/Mo-Re alloy interface depletes the Re content of the interfacial layer. In the case of Mo-Pt on HfO2 an oxygen-rich interface promotes the formation of one monolayer (but not two monolayers) of Mo separating PtMox from HfO2; while a stoichiometric interface favors an abrupt PtMo xHfO2 interface. This study also shows that the presence of Mo in the alloy stabilizes Pt which can potentially decrease the tendency of Pt to diffuse into the oxide matrix. The individual constituents of these intermetallic compounds exhibit high vacuum work functions; and therefore these alloys are also likely to have sufficiently high work functions to be considered as promising candidates for p-type gate electrodes in future generations of transistors. © 2006 American Institute of Physics;
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