Irreversible increase of the low-temperature paramagnetism in GaAs substrates

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作者：
Ney, A. [1 ,2 ]
Jan, G. [1 ]
Parkin, S.S.P. [1 ]
机构：
[1] IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, CA 95120
[2] Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305
来源：
Journal of Applied Physics | 1600年 / 99卷 / 04期
关键词：
The magnetic susceptibility of undoped GaAs substrates is measured from 2 to 300 K. It comprises two types of temperature-dependent net-paramagnetic contributions. One is a Van Vleck-type paramagnetic contribution which scales inversely with the band gap of the semiconductor and thus increases up to room temperature. The other resembles a Langevin-type paramagnetism which sets in only at low temperatures after certain thermal cycling procedures. © 2006 American Institute of Physics;
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